Solve any four questionQ.1(a,b,c,d,e)
1(a)
Draw layout for 2 inputs CMOS NAND gate.
5 M
1(a)
Explain any two properties of autocorrelation function.
5 M
1(b)
How to distribute a clock properly in VLSI chip?
5 M
1(c)
Draw layout for minimum size 6T SRAM cell.
5 M
1(d)
Explain the issues associated with pass transistor logic with suitable example.
5 M
1(e)
Explain constant voltage scaling?
5 M
2(a)
Explain the fabrication process flow for NMOS with proper device cross section and layout.
10 M
2(b)
Explain pseudo NMOS logic with suitable example.
5 M
2(c)
Show realization of MOSFET based one Bit Shift Register.
5 M
3(a)
Design the circuit and draw layout for the function Y=(D+E+A)(B+C) using CMOS logic. Also find equivalent CMOS inverter circuit for simultaneous switching of all inputs assuming that (W/L)p=30 for all (W/L) n=10 for all NMOS transistors.
10 M
3(b)
What are the problems of Domino logic? Also suggest remedy for these problems.
10 M
4(a)
With neat diagrams explain the principle of working of NOR flash.
10 M
4(b)
Draw and explain Barrel shifter.
6 M
4(c)
Draw schematic and layout for 4:2 decoder.
4 M
5(a)
Explain ripple carry adder in detail.
10 M
5(b)
Explain how to ensure faithful write operation in case of 6 T SRAM Cell.
6 M
5(c)
Compare LEVEL 1 and LEVEL 2 MOSFET model.
4 M
6(a)
With suitable diagrams explain on chip clock generation circuit.
5 M
6(b)
Explain a typical power distribution scheme followed in VLSI chip.
5 M
6(c)
Describe the dynamic power dissipation in CMOS.
5 M
6(d)
Expalin Latch-up in CMOS.
5 M
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