MU Electronics Engineering (Semester 8)
CMOS VLSI Design
May 2014
Total marks: --
Total time: --
INSTRUCTIONS
(1) Assume appropriate data and state your reasons
(2) Marks are given to the right of every question
(3) Draw neat diagrams wherever necessary


1 (a) Give and explain the routing capacitance with fringing field effect
5 M
1 (b) Give and explain carry save adder
5 M
1 (c) Write specification of Row Decoder, Column Decoder and MUX/DMUX used in 64K X 8 SRAM
5 M
1 (d) Give and explain two technique to improve the minimum frequency requirement of clock signal
5 M

2 (a) Draw and explain full adder using dual rail complementary pass transistor logic.
10 M
2 (b) Give various important parameters affecting switching performance of CMOS inverter. Suggest methods to improve it.
10 M

3 (a) Explain in detail sizing of routing conductor with respect to metal migration and ground bounce /power supply drop,
10 M
3 (b) Draw 1T DRAM cell and explain its write, read, hold and refresh operation.
10 M

4 (a) Draw and explain CMOS two-stage OP-AMP.
10 M
4 (b) Explain various technique of clock generation. Discuss ?H? tree clock distribution.
10 M

5 (a) Draw three variable-three output PLA and programme it with following functions:
fx=ac+be
Fy=abc+abc
Fz=ab+ab
10 M
5 (b) Give and explain interconnect scaling
10 M

6 (a) Give and explain single phase clock system and explain its drawback
10 M
6 (b) Explain need of input protection and give the input protection circuits.
10 M

Write short note on (any three) 20
7 (a) Switch Capacitor amplifier
7 M
7 (b) Sense amplifier
7 M
7 (c) Low power design consideration
7 M
7 (d) Floating gate MOSFET
7 M



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