STUPIDSID
1 (a)
What is Non-ideal effects in BJT and hence explain Base width modulation in brief
5 M
1 (b)
Justify how phototransistor is more practical than photo diode
5 M
1 (c)
Explain in brief TWO Terminal MOS structure
5 M
1 (d)
Explain construction and characteristics of UJT
5 M
2 (a)
Explain concepts, construction, characteristics and working of Gunn diode
10 M
2 (b)
Explain basic principle of operation of BJT with the help of construction, minority carrier distribution and energy band diagrams
10 M
3 (a)
Explain structure and operation of MOSFET considering different cases of threshold voltage VT
10 M
3 (b)
An abrupt PN junction has dopant concentrations of
Na=2×1016 cm-3 and Nd=2 ×1015 cm-3 at T=300 K
Calculate :- (a) Vbi
(ii) W at VR=0 and VR=8V
(iii) E maximum at VR=0 and VR=8V
Na=2×1016 cm-3 and Nd=2 ×1015 cm-3 at T=300 K
Calculate :- (a) Vbi
(ii) W at VR=0 and VR=8V
(iii) E maximum at VR=0 and VR=8V
10 M
4 (a)
What is photovoltaic effect. Explain in detail Solar Cell with working, characteristics and practical applications
10 M
4 (b)
For an n-channel MOS transistor with
?n=600 cm2/V.S Cox=7×10-18 F/cm2,
W=20?m, L=2?m and VTO=1.0V
Examine the relationship between the Drain current and terminal voltages.
?n=600 cm2/V.S Cox=7×10-18 F/cm2,
W=20?m, L=2?m and VTO=1.0V
Examine the relationship between the Drain current and terminal voltages.
10 M
5 (a)
Explain construction, working and characteristics of TRIAC & DIAC
10 M
5 (b)
Explain schottky-barrier diode with the help of energy band diagram
10 M
6 (a)
What is HBT, explain construction and energy band diagram of HBT
10 M
6 (b)
Explain difference between N-channel and P-channel JFET, also explain characteristics (Drain and Transfer) for N-channel JFET
10 M
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