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MU Electronics Engineering (Semester 3)
Electronic Devices
May 2014
Total marks: --
Total time: --
INSTRUCTIONS
(1) Assume appropriate data and state your reasons
(2) Marks are given to the right of every question
(3) Draw neat diagrams wherever necessary

1 (a) What is Non-ideal effects in BJT and hence explain Base width modulation in brief
5 M
1 (b) Justify how phototransistor is more practical than photo diode
5 M
1 (c) Explain in brief TWO Terminal MOS structure
5 M
1 (d) Explain construction and characteristics of UJT
5 M

2 (a) Explain concepts, construction, characteristics and working of Gunn diode
10 M
2 (b) Explain basic principle of operation of BJT with the help of construction, minority carrier distribution and energy band diagrams
10 M

3 (a) Explain structure and operation of MOSFET considering different cases of threshold voltage VT
10 M
3 (b) An abrupt PN junction has dopant concentrations of
Na=2×1016 cm-3 and Nd=2 ×1015 cm-3 at T=300 K
Calculate :- (a) Vbi
(ii) W at VR=0 and VR=8V
(iii) E maximum at VR=0 and VR=8V
10 M

4 (a) What is photovoltaic effect. Explain in detail Solar Cell with working, characteristics and practical applications
10 M
4 (b) For an n-channel MOS transistor with
?n=600 cm2/V.S Cox=7×10-18 F/cm2,
W=20?m, L=2?m and VTO=1.0V
Examine the relationship between the Drain current and terminal voltages.
10 M

5 (a) Explain construction, working and characteristics of TRIAC & DIAC
10 M
5 (b) Explain schottky-barrier diode with the help of energy band diagram
10 M

6 (a) What is HBT, explain construction and energy band diagram of HBT
10 M
6 (b) Explain difference between N-channel and P-channel JFET, also explain characteristics (Drain and Transfer) for N-channel JFET
10 M

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