STUPIDSID
1 (a)
Draw small signal model of pn junction diode, what is the main use of this model.
5 M
1 (b)
What do you mean by different transistor models, explain Hybrid Pi model.
5 M
1 (c)
What are the advantages of MESFET over MOSFET, explain basic principle of operation of MESFET.
5 M
1 (d)
What is the basic operating principle of phototransistor, draw V_I characteristics and explain its use in field of optoelectronics.
5 M
1 (e)
How PUT is different than UJT, explain.
5 M
2 (a)
Explain structure, construction and working of IMPATT diode.
10 M
2 (b)
Explain working of BJT considering all possible current density components in an NPN transistor operating in Active mode.
10 M
3 (a)
Derive equation of Electric field for a PN junction under zero bias and hence derive equation of maximum electric field.
10 M
3 (b)
What is HBT, explain with the help of energy level diagram.
5 M
3 (c)
Explain qualitative characteristics of Schottky diode.
5 M
4 (a)
Explain JFET with the help of construction and V-I characteristics, how it is different than BJT.
10 M
4 (b)
What is the basic working principle of Solar cell, explain construction, working and V-I characteristics, also explain what is the need to connect solar cells in series on in parallel fashion.
10 M
5 (a)
Derive equation of threshold voltage of a N channel MOSFET, also derive threshold voltage equation in generalized form.
10 M
5 (b)
Explain construction working and V-I characteristics of SCR, also explain how SCR can be switched OFF.
10 M
6 (a)
Explain working of MOSFET considering possible cases of VGS voltages.
10 M
6 (b)
Explain construction, working and V-I characteristics of TRIAC.
5 M
6 (c)
Explain channel length modulation in MOSFET.
5 M
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