1 (a)
Draw small signal model of pn junction diode, what is the main use of this model.

5 M

1 (b)
What do you mean by different transistor models, explain Hybrid Pi model.

5 M

1 (c)
What are the advantages of MESFET over MOSFET, explain basic principle of operation of MESFET.

5 M

1 (d)
What is the basic operating principle of phototransistor, draw V_I characteristics and explain its use in field of optoelectronics.

5 M

1 (e)
How PUT is different than UJT, explain.

5 M

2 (a)
Explain structure, construction and working of IMPATT diode.

10 M

2 (b)
Explain working of BJT considering all possible current density components in an NPN transistor operating in Active mode.

10 M

3 (a)
Derive equation of Electric field for a PN junction under zero bias and hence derive equation of maximum electric field.

10 M

3 (b)
What is HBT, explain with the help of energy level diagram.

5 M

3 (c)
Explain qualitative characteristics of Schottky diode.

5 M

4 (a)
Explain JFET with the help of construction and V-I characteristics, how it is different than BJT.

10 M

4 (b)
What is the basic working principle of Solar cell, explain construction, working and V-I characteristics, also explain what is the need to connect solar cells in series on in parallel fashion.

10 M

5 (a)
Derive equation of threshold voltage of a N channel MOSFET, also derive threshold voltage equation in generalized form.

10 M

5 (b)
Explain construction working and V-I characteristics of SCR, also explain how SCR can be switched OFF.

10 M

6 (a)
Explain working of MOSFET considering possible cases of VGS voltages.

10 M

6 (b)
Explain construction, working and V-I characteristics of TRIAC.

5 M

6 (c)
Explain channel length modulation in MOSFET.

5 M

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