STUPIDSID
Answer any four
1(a)
Justify that the space charge width increase with reverse biased voltage in a p-n junction diode.
5 M
1(b)
Explain zener diode application as voltage regulator.
5 M
1(c)
Define internal pinchoff voltage, pinchoff voltage and drain to source saturation voltage.
5 M
1(d)
Describe construction and V-I characteristics of IGBT.
5 M
1(e)
Explain two terminal MOS structure.
5 M
2(a)
Explain concept, working and charateristics of Tunnel diode.
10 M
2(b)
Explain the types of junction breakdown in case of zener diode.
10 M
3(a)
For a n-channel JFET with IDSS = 8mA, Vp = -4V
(i) If ID=3mA calculate the value of VGS
(ii) Calculate VDS(SAT) for ID=3mA
(iii) Calculate transconductance (gm)
(i) If ID=3mA calculate the value of VGS
(ii) Calculate VDS(SAT) for ID=3mA
(iii) Calculate transconductance (gm)
10 M
3(b)
Explain minority carrier distributaion in BJT considering transistor in active, cut off and saturation mode.
10 M
4(a)
Compare Enhancement type and Depletion type MOSFET on the basis of their construction, working principle, characteristics and biasing.
10 M
4(b)
Discuss construction and working of SCR with its characteristics in detail.
10 M
5(a)
Discuss Ebers-Moll model for BJT in detain.
10 M
5(b)
Discuss HBT in detain.
10 M
Write short notes
6(a)
Optocoupler
5 M
6(b)
Gunn diode
5 M
6(c)
MESFET
5 M
6(d)
DIAC-TRIAC
5 M
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