STUPIDSID
1 (a)
For the diodes, define forward voltage drop, maximum forward current, dynamic resistance, reverse saturation current & reverse breakdown voltage,
5 M
1 (b)
Draw characteristics of Pn junction in thermal equilibrium? Explain.
5 M
1 (c)
Define the contributing factors forwards the low frequency common base current gain of BJT.
5 M
1 (d)
Define internal pinch-off voltage, pinchoff voltage J& drain to source saturation voltage of JFET.
5 M
1 (e)
What are types of MOSFET? Explain.
5 M
1 (f)
Explain construction working & characteristics of UJT.
5 M
2 (a)
What is space charge width? Derive an expression for it, when the diode is forward biased and reverse biased.
10 M
2 (b)
List the ideal conditions of BJT and explain the non-ideal effects.
10 M
3 (a)
Draw Ebers-Moll equivalent circuit of BJT & derive necessary expressions for current and voltages.
10 M
3 (b)
Compare BJT, JFET & MESFET.
10 M
4 (a)
What is channel length modulation in MOSFET? Derive necessary expression for the same.
10 M
4 (b)
Explain construction working & characteristics of Tunnel diode.
10 M
5 (a)
What is HBT? Explain construction & energy band diagram of the same.
10 M
5 (b)
For an n-channel MOS transistor with ?n=600 cm2/vs, Cox=7\times 10^{-8} F/cm2, W=20 ?m, L=2 ?m and VTO=1.0V Examine the relationship between the drain current & terminal voltages.
10 M
Write short notes
6 (a)
SCR
5 M
6 (b)
Solar Cell
5 M
6 (c)
Photo diode
5 M
6 (d)
IGBT
5 M
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