STUPIDSID
Choose the correct answer:
1 (a) (i)
Zener diode can be used for rectification. This statement is:
a) True
b) False
c) Neither true nor false
d) None of these
a) True
b) False
c) Neither true nor false
d) None of these
1 M
1 (a) (ii)
PIV in case of half wave rectifier for all input signal Vmsin?t is:
a) Vm
b) 2Vm
c) Vm/2
d) Vm/?2
a) Vm
b) 2Vm
c) Vm/2
d) Vm/?2
1 M
1 (a) (iii)
If frequency of input is 60 Hz for a full wave rectifier, the frequency of ripple is
a) 30 Hz
b) 60 Hz
c) 120 Hz
d) 180 Hz
a) 30 Hz
b) 60 Hz
c) 120 Hz
d) 180 Hz
1 M
1 (a) (iv)
If a peak to peak voltage is 4V then RMS voltage is:
a) ?2 Volt
b) 2 Volt
c) 2.82 Volt
d) Both A&C
a) ?2 Volt
b) 2 Volt
c) 2.82 Volt
d) Both A&C
1 M
1 (b)
Calculate the reverse saturation current for silicon diode which passes a current of 10mA at 27°C, for a forward bias of 700mV.
4 M
1 (c)
Explain the effect of temperature on the diode characteristics and also on the power rating of the diode.
6 M
1 (d)
Explain the operations of a full wave center tap rectifier with neat circuit diagram and wave forms?
5 M
Choose the correct answer:
2 (a) (i)
Bipolar junction transistor is a _____ controlled device.
a) Voltage
b) Current
c) Power
d) Temperature
a) Voltage
b) Current
c) Power
d) Temperature
1 M
2 (a) (ii)
Operating point must be _____ for proper functioning of transistor.
a) Increasing
b) Decreasing
c) Stable
d) High
a) Increasing
b) Decreasing
c) Stable
d) High
1 M
2 (a) (iii)
The DC load line of a transistor is a:
a) Curved line
b) '-'ve slope line
c) '+' ve slope line
d) Zero slope line
a) Curved line
b) '-'ve slope line
c) '+' ve slope line
d) Zero slope line
1 M
2 (a) (iv)
In a transistor ? and ? are related by:
a) ?=1/(1-?)
b) ?=?/(1+?)
c) ?=?/(1-?)
d) ?=1/(1-?)
a) ?=1/(1-?)
b) ?=?/(1+?)
c) ?=?/(1-?)
d) ?=1/(1-?)
1 M
2 (b)
Explain the characteristics of common base transistor configuration with neat circuit diagram.
8 M
2 (c)
What is a DC load line? Explain with a fixed bias circuit diagram.
4 M
2 (d)
For the fixed bias circuit shown in the figure, VBE=0.7V, ?=60,
find:
i) Quiescent values of base and collector currents
ii) Quiescent value of VCE
iii) Base-ground and collector ground voltages
iv) Base-collector voltage
find:
i) Quiescent values of base and collector currents
ii) Quiescent value of VCE
iii) Base-ground and collector ground voltages
iv) Base-collector voltage
4 M
Choose the correct answer:
3 (a) (i)
In voltage divider bias circuit RE is used for:
a) Stabilization
b) As a load
c) As a bypass element
d) All of these
a) Stabilization
b) As a load
c) As a bypass element
d) All of these
1 M
3 (a) (ii)
For exact analysis of voltage divider circuit _______ theorem is used
a) Norton's
b) Thevenin's
c) Superposition
d) Any one of these
a) Norton's
b) Thevenin's
c) Superposition
d) Any one of these
1 M
3 (a) (iii)
_____ is the linear region of transistor characteristics.
a) Saturation
b) Cut-off
c) Active
d) Both A&C
a) Saturation
b) Cut-off
c) Active
d) Both A&C
1 M
3 (a) (iv)
Stability factor of fixed bias circuit is,
a) ?
b) ?-1
c) 1+?
d) None of these
a) ?
b) ?-1
c) 1+?
d) None of these
1 M
3 (b)
List the factors which affect the stability of operating point.
4 M
3 (c)
With a neat circuit diagram, explain voltage divider biasing circuit and derive the expression for VCE and IC using exact analysis.
8 M
3 (d)
For the circuit shown in the figure using Silicon transistor with VBE=0.7V and ?=80, find VCE and VB
4 M
Choose the correct answer:
4 (a) (i)
The device which has wide application in pulse generation is:
a) FET
b) BJT
c) Diode
d) UJT
a) FET
b) BJT
c) Diode
d) UJT
1 M
4 (a) (ii)
The FET is a _____ controlled device.
a) Current
b) Voltage
c) Power
d) Temperature
a) Current
b) Voltage
c) Power
d) Temperature
1 M
4 (a) (iii)
The device which is known as a thyristor is:
a) Diode
b) FET
c) Transistor
d) SCR
a) Diode
b) FET
c) Transistor
d) SCR
1 M
4 (a) (iv)
In FET the gate source junction is:
a) Forward biased
b) Reverse biased
c) Unbiased
d) None of these
a) Forward biased
b) Reverse biased
c) Unbiased
d) None of these
1 M
4 (b)
Explain the working of FET with neat circuit diagram and relevant characteristics. Indicate each region of characteristics.
8 M
4 (c)
Explain the working of UJT with neat circuit diagram. Indicate all regions in the characteristics.
8 M
Choose the correct answer:
5 (a) (i)
The coupling capacitors in RC couple amplifier affect _____ frequency response
a) Low
b) High
c) Very high
d) Above 100 kHz
a) Low
b) High
c) Very high
d) Above 100 kHz
1 M
5 (a) (ii)
The frequency at which oscillator will operate is the frequency for which the phase shift of the loop gain is:
a) 0°
b) 360°
c) 180°
d) Both A&B
a) 0°
b) 360°
c) 180°
d) Both A&B
1 M
5 (a) (iii)
In an oscillator the phase shift produced by amplifier is:
a) 0°
b) 180°
c) 90°
d) 270°
a) 0°
b) 180°
c) 90°
d) 270°
1 M
5 (a) (iv)
The oscillator used to generate oscillations in audio frequency range is:
a) LC oscillator
b) RC oscillator
c) Crystal oscillator
d) Both A&B
a) LC oscillator
b) RC oscillator
c) Crystal oscillator
d) Both A&B
1 M
5 (b)
Explain the working of RC phase shift oscillator with neat circuit diagram and waveforms at each stage.
8 M
5 (c)
List the effects of negative feedback.
4 M
5 (d)
In a transistor Hartley oscillator, L1=10µH, L2=10µH. Find the value of C required for an oscillating frequency of 150 kHz, take M=0.
4 M
Choose the correct answer:
6 (a) (i)
An op-amp has _____ output impedance.
a) ?
b) 0
c) 10000?
d) 600?
a) ?
b) 0
c) 10000?
d) 600?
1 M
6 (a) (ii)
Voltage follower has _____ gain.
a) High
b) Low
c) Unity
d) None of these
a) High
b) Low
c) Unity
d) None of these
1 M
6 (a) (iii)
An op-amp non-inverting amplifier has R1=1k & Rf=3k when Vi=2V the output is:
a) - 4V
b) 4V
c) 8V
d) - 8V
a) - 4V
b) 4V
c) 8V
d) - 8V
1 M
6 (a) (iv)
Op-amp configuration used as a buffer is:
a) Inverting amplifier
b) Non-inverting amplifier
c) Voltage follower
d) Adder
a) Inverting amplifier
b) Non-inverting amplifier
c) Voltage follower
d) Adder
1 M
6 (b)
List the characteristics of ideal op-amp and practical op-amp.
8 M
6 (c)
The input to the op-amp shown in the figure 6.c., at the non-inverting terminal is 10 sin10t volts. Determine the output waveform indicating time period and maximum values.
4 M
6 (d)
Find the output of the op-amp circuit shown in figure 6.d.
4 M
Choose the correct answer:
7 (a) (i)
(100)10= (?)16
a) 64
b) 144
c) 46
d) 80
a) 64
b) 144
c) 46
d) 80
1 M
7 (a) (ii)
75 in binary contains _____ number of 1's.
a) 8
b) 4
c) 6
d) 3
a) 8
b) 4
c) 6
d) 3
1 M
7 (a) (iii)
(16)8= (?)10
a) 18
b) 20
c) 14
d) 25
a) 18
b) 20
c) 14
d) 25
1 M
7 (a) (iv)
(ABC)16= (?)10
a) 3000
b) 4230
c) 2748
d) 2250
a) 3000
b) 4230
c) 2748
d) 2250
1 M
7 (b)
Perform the following:
i) (101110)2=(?)8
ii) (110011)2-(011001)2=(?)2
iii) (E10A2)16-(5FF1)16=(?)16
iv) (77721)8-(66432)8=(?)8
v) (2384)16=(?)8
i) (101110)2=(?)8
ii) (110011)2-(011001)2=(?)2
iii) (E10A2)16-(5FF1)16=(?)16
iv) (77721)8-(66432)8=(?)8
v) (2384)16=(?)8
5 M
7 (c)
Explain the need for modulation.
5 M
7 (d)
Explain the working of a super heterodyne receiver with neat circuit diagram and waveforms at each stage.
5 M
Choose the correct answer:
8 (a) (i)
The EX-OR gate is which one input is connected to VCC, operates as _____ gate.
a) AND
b) OR
c) NOR
d) NOT
a) AND
b) OR
c) NOR
d) NOT
1 M
8 (a) (ii)
The gate whose output 1's zero only when both the inputs are high is _____ gate.
a) NAND
b) NOR
c) OR
d) AND
a) NAND
b) NOR
c) OR
d) AND
1 M
8 (a) (iii)
A+A'B+A is:
a) A
b) B
c) A+B'
d) A+B
a) A
b) B
c) A+B'
d) A+B
1 M
8 (a) (iv)
Universal gates are:
a) NAND & NOR
b) AND & NAND
c) OR & NOR
d) NOR & EX-NOR
a) NAND & NOR
b) AND & NAND
c) OR & NOR
d) NOR & EX-NOR
1 M
8 (b)
What is a half adder and implement it using universal gates.
6 M
8 (c)
Simplify and realize the Boolean expression using two input NAND gates only.
i) ABCD+AB'CD
ii) AB+ABC+ABC'+A'BC
iii) ABCD+A'BCD+ABD
i) ABCD+AB'CD
ii) AB+ABC+ABC'+A'BC
iii) ABCD+A'BCD+ABD
10 M
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