1 (a)
Draw and explain V-I characteristics of a Germanium Diode.

5 M

1 (b)
Find the value of the series resistance R, required to drive a forward current of 1.25m through a Germanium diode from a 4.5V battery. Write the circuit diagram showing all the value.

4 M

1 (c)
With neat diagram explain the working of a half wave rectifier along with relevant waveforms

7 M

1 (d)
Discuss in brief clipping circuit. Explain the working of positive clipper with neat circuit diagram and relevant waveforms

4 M

2 (a)
Explain the working of a full wave rectifier using 2 diodes with neat diagram. Also derived the expressions for I

_{dc}and I_{ms}of a full wave rectifier.
10 M

2 (b)
Discuss in brief clamping circuit. Explain working of a negative clamper.

4 M

2 (c)
Distinguish between Zener and Avalanche breakdown

6 M

3 (a)
Calculate the value of I

_{C }, I_{E}and β_{DC}for a transistor with α_{DC}=0.98 and I_{B}=120μA.
6 M

3 (b)
For the base circuit V

_{cd}=18V, R_{c}=2.2KΩ, h_{fe}=100 and V_{BE}=0.7 V Find I_{B}, I_{c}and V_{CE}. Draw the DC load line and indicate the Q point.
8 M

3 (c)
Discuss the ideal characteristics of an operational amplifier

6 M

4 (a)
Explain the voltage follower circuit using operational amplifier. Mention its importance properties.

5 M

4 (b)
Design an adder circuit using Op-amp to obtain an output voltage V

_{0}=2 [0.1V_{1}+0.5V_{2}+2V_{3}], where V_{1}V_{2}and V_{3}are input voltage. Draw the circuit diagram.
8 M

4 (c)
Design a voltage divider bias circuit to operate from a 12V supply with V

_{CE}=3V, V_{E}=5V and I_{c}=1mA, V_{BE}=0.7V
7 M

5 (a)
With the help of a diode switching circuit and truth table explain the operation of an AND gate and OR gate.

6 M

5 (b)
State and prove DeMorgan's theorem for three variables.

6 M

5 (c)
With truth and logical expressions, give the design of a full adder circuit. Realize the circuit using i) Basic gate and ii) NAND gates

8 M

6 (a)
Performs the following conversions :

i) (1234.56)

i) (1234.56)

_{8}=(?)_{10}ii) (10110101001.101011)_{2}=(?)_{16}iii)(988.86)_{10}=(?)_{2}iv)(532.65)_{10}=(?)_{16}v) (ABCD.EF)_{H}=(?)8
5 M

6 (b)
i) Subtract (1000.01)

ii) Add (7AB,67)

_{2}from (1011.10)_{2}using 1's and 2's complement method.ii) Add (7AB,67)

_{16}with (15C.71)_{16}
5 M

6 (c)
Design a half adder circuit and realize using Basic gates and NAND gates

5 M

6 (d)
What are Universal gates? Realise AND and OR gate using universal gates.

5 M

7 (a)
Distinguish between a Latch and flipflop

4 M

7 (b)
Explain i) see back effect ii) Peltier effect and iii) Thomson effect

6 M

7 (c)
Explain the architecture of 8085 microprocessor, with neat diagram

10 M

8 (a)
Explain the working of LVDT with neat diagram

6 M

8 (b)
List the difference between a microprocessor and micro controller

8 M

8 (c)
Explain the working of a R-S flipflop with relevant circuit and truth table

6 M

9 (a)
What is Modulation? Mention some of the need for modulation in communication system

6 M

9 (b)
Give the comparison between AM and FM

8 M

9 (c)
With block diagram, explain the working of cellular mobile communication system

6 M

10 (a)
Define Amplitude modulation and derive the expression for AM wave with relevant
waveforms. Draw the frequency spectrum

8 M

10 (b)
With neat diagram , explain the working of telephone system

6 M

10 (c)
An audio frequency signal 10 sin (2π × 500)t is used to amplitude module a carrier of 50 sin(2π × 10

i) Modulation index

ii) Sideband frequencies

iii) Band width

iv) Amplitude of each sideband

v) Total power delivered to a load of 600 Ω

vi) Transmission efficiency

^{5}t). calculatei) Modulation index

ii) Sideband frequencies

iii) Band width

iv) Amplitude of each sideband

v) Total power delivered to a load of 600 Ω

vi) Transmission efficiency

6 M

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