STUPIDSID
1 (a)
The segregation co-efficient of oxygen is 0.25. Find the concentration of oxygen in the silicon ingot at a fraction solidified of 0.3. The concentration of oxygen in the silicon at the top of the crystal is 12.5x1017 atoms/cm3 at fraction solidified of 0.1.
5 M
1 (b)
Draw the schematic diagram and stick diagram of NMOS depletion inverter
5 M
1 (c)
Explain what is pass transistor logic ? Calculate the op voltage of the circuit if VDD = 5V and VTH = 1.5V
5 M
1 (d)
Define the threshold voltage with equation and explain the body effect.
5 M
1 (e)
State the difference between diffusion and ion implementation.
5 M
2 (a)
With neat cross sectional diagram explain the process of CMOS fabrication using p-well process. Thus give the number of masks required.
10 M
2 (b)
Consider an Aluminum silicon MOS structure with the following parameters:
ND=2.5x1014 /cm3
QOX=1010 qc/cm3
TOX=650 Ao
?ms= -0.35V
Ni=1.45 x 1010/cm3
ND=2.5x1014 /cm3
QOX=1010 qc/cm3
TOX=650 Ao
?ms= -0.35V
Ni=1.45 x 1010/cm3
10 M
3 (a)
Draw the circuit diagram of two input NAND gate using CMOS. Draw its stick diagram & layout using ? based design rules.
10 M
3 (b)
State all types of inverter with their merits and demerits. Give their applications.
10 M
4 (a)
Determine pull up to pull down ratio (Zpu/Zpd) for an NMOS inverter when driven by another inverter.
10 M
4 (b)
Explain latch up in CMOS in detail. What are the remedies to avoid latch-up.
10 M
5 (a)
Implement the following using CMOS logic function:
F= X. (Y + Z) + XW
Design the circuit and draw the stick diagram using Euler?s method.
10 M
5 (b)
Design 4: 1 multiplexer using MOS transmission logic. Draw the stick diagram of the same.
10 M
6 (a)
Compare both the scaling methods. Show analytically how power dissipation, maximum operating frequency, current density and saturation current scale in terms of scaling factors.
10 M
6 (b)
Write the Verilog code for 2 input NAND gate using the module of NAND gate design SR latch and write the Switch level Verilog code for the same.
10 M
7 (a)
Short channel effect in MOSFET?s.
7 M
7 (b)
Compare buried and butting contacts.
7 M
7 (c)
Semi custom and full custom design
7 M
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