1 (a)
Draw and explain the V-I characteristics of a silicon diode.

8 M

1 (b)
What is a rectifier? With a neat circuit diagram and waveforms, explain the working of full wave rectifier.

8 M

1 (c)
A full wave rectifier with a load of 1 kΩ. The ac voltage applied to the diode is 200-0-200 V, if diode resistance is neglected. Calculate:

i) Average dc current;

ii) Average dc voltage.

i) Average dc current;

ii) Average dc voltage.

4 M

2 (a)
Draw and explain the input and output characteristics of common emitter configuration.

8 M

2 (c)
Explain full wave rectifier with capacitor filter with necessary waveforms.

7 M

3 (a)
With a neat circuit diagram, explain the voltage divider bias circuit by giving its exact analysis.

8 M

3 (b)
For the base bias circuit for npn transistor, find I

_{B}, I_{C}and V_{CE}if R_{C}=2.2 KΩ, R_{B}=470 KΩ. V_{CC}=18 V, h_{fe}=100. Draw the dc load line and Q point.
8 M

3 (c)
What is op-amp? List the ideal characteristics of an op-amp.

4 M

4 (a)
Define for an op-amp (i) CMRR, (ii) Slew rate, (iii) PSRR.

6 M

4 (b)
Show how an op-amp can be used as integrator. Derive an expression for its output.

6 M

4 (c)
For the circuit shown in Fig. Q4(c). Calculate the output voltage.

4 M

4 (d)
What is voltage follower? Explain.

4 M

5 (a)
Convert:

i) (35.45)

ii) (475.25)

iii) (3FD)

i) (35.45)

_{10}=( )_{2}.ii) (475.25)

_{8}=( )_{10}iii) (3FD)

_{16}= ( )_{2}.
6 M

5 (b)
State and prove DeMorgan's theorems.

6 M

5 (c)
Show that: [ i) Aoverline{B}C + B + Boverline{D}+ ABoverline{D} + overline{A}C = B+C \
ii) overline{overline{AB}+overline{A}+AB}=0 \
iii) AB+A(B+C)+B(B+C)=B+AC ]

6 M

5 (d)
What are universal gates?

2 M

6 (a)
Realize two input EX-OR gate using only NAND gates.

5 M

6 (b)
Design full adder and implement it.

7 M

6 (c)
Subtract (111001)

_{2}from (101011)_{2}using 2's complement method.
4 M

6 (d)
Realize OR gate using diodes and explain.

4 M

7 (a)
Define flip flop. Explain R-S flip flop.

5 M

7 (b)
With neat block diagrams, explain architecture of 8085 microprocessor.

10 M

7 (c)
List the difference between microprocessor and microcontroller.

5 M

8 (a)
What is transducer? Distinguish between active and passive transducer.

5 M

8 (b)
With a neat sketch, explain construction and working of LVDT.

7 M

8 (c)
Explain the working of photo voltaic transducer.

8 M

9 (a)
What is modulation? What is the need of modulation?

5 M

9 (b)
A 500, W, 1MHz carrier is amplitude modulated with a sinusoidal signal of 1 kHz. The depth of modulation is 60%. Calculate the bandwidth, power in the sidebands and the total power transmitted.

7 M

9 (c)
Define AM. Draw the AM signal and its spectrum. Derive the necessary expression for AM.

8 M

10 (a)
With a block diagram, explain typical cellular mobile unit.

5 M

10 (b)
What is ISDN? Explain services of ISDN.

6 M

10 (c)
Explain advantages and applications of optical fibres.

5 M

10 (d)
Give the comparison between AM and FM.

4 M

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