STUPIDSID
1 (a)
Draw and explain V-I characteristics of a Germanium Diode.
5 M
1 (b)
Find the value of the series resistance R, required to drive a forward current of 1.25m through a Germanium diode from a 4.5V battery. Write the circuit diagram showing all the value.
4 M
1 (c)
With neat diagram explain the working of a half wave rectifier along with relevant waveforms
7 M
1 (d)
Discuss in brief clipping circuit. Explain the working of positive clipper with neat circuit diagram and relevant waveforms
4 M
2 (a)
Explain the working of a full wave rectifier using 2 diodes with neat diagram. Also derived the expressions for Idc and I ms of a full wave rectifier.
10 M
2 (b)
Discuss in brief clamping circuit. Explain working of a negative clamper.
4 M
2 (c)
Distinguish between Zener and Avalanche breakdown
6 M
3 (a)
Calculate the value of IC , IE and βDC for a transistor with α DC=0.98 and I B=120μA.
6 M
3 (b)
For the base circuit Vcd=18V, Rc=2.2KΩ, hfe =100 and VBE=0.7 V Find IB, I c and VCE. Draw the DC load line and indicate the Q point.
8 M
3 (c)
Discuss the ideal characteristics of an operational amplifier
6 M
4 (a)
Explain the voltage follower circuit using operational amplifier. Mention its importance properties.
5 M
4 (b)
Design an adder circuit using Op-amp to obtain an output voltage V0=2 [0.1V1+0.5V2+2V3], where V1 V2 and V3 are input voltage. Draw the circuit diagram.
8 M
4 (c)
Design a voltage divider bias circuit to operate from a 12V supply with VCE=3V, VE=5V and Ic=1mA, VBE=0.7V
7 M
5 (a)
With the help of a diode switching circuit and truth table explain the operation of an AND gate and OR gate.
6 M
5 (b)
State and prove DeMorgan's theorem for three variables.
6 M
5 (c)
With truth and logical expressions, give the design of a full adder circuit. Realize the circuit using i) Basic gate and ii) NAND gates
8 M
6 (a)
Performs the following conversions :
i) (1234.56)8=(?)10 ii) (10110101001.101011)2=(?)16 iii)(988.86)10=(?)2 iv)(532.65)10=(?)16 v) (ABCD.EF)H=(?)8
i) (1234.56)8=(?)10 ii) (10110101001.101011)2=(?)16 iii)(988.86)10=(?)2 iv)(532.65)10=(?)16 v) (ABCD.EF)H=(?)8
5 M
6 (b)
i) Subtract (1000.01)2 from (1011.10)2 using 1's and 2's complement method.
ii) Add (7AB,67) 16 with (15C.71)16
ii) Add (7AB,67) 16 with (15C.71)16
5 M
6 (c)
Design a half adder circuit and realize using Basic gates and NAND gates
5 M
6 (d)
What are Universal gates? Realise AND and OR gate using universal gates.
5 M
7 (a)
Distinguish between a Latch and flipflop
4 M
7 (b)
Explain i) see back effect ii) Peltier effect and iii) Thomson effect
6 M
7 (c)
Explain the architecture of 8085 microprocessor, with neat diagram
10 M
8 (a)
Explain the working of LVDT with neat diagram
6 M
8 (b)
List the difference between a microprocessor and micro controller
8 M
8 (c)
Explain the working of a R-S flipflop with relevant circuit and truth table
6 M
9 (a)
What is Modulation? Mention some of the need for modulation in communication system
6 M
9 (b)
Give the comparison between AM and FM
8 M
9 (c)
With block diagram, explain the working of cellular mobile communication system
6 M
10 (a)
Define Amplitude modulation and derive the expression for AM wave with relevant
waveforms. Draw the frequency spectrum
8 M
10 (b)
With neat diagram , explain the working of telephone system
6 M
10 (c)
An audio frequency signal 10 sin (2π × 500)t is used to amplitude module a carrier of 50 sin(2π × 105t). calculate
i) Modulation index
ii) Sideband frequencies
iii) Band width
iv) Amplitude of each sideband
v) Total power delivered to a load of 600 Ω
vi) Transmission efficiency
i) Modulation index
ii) Sideband frequencies
iii) Band width
iv) Amplitude of each sideband
v) Total power delivered to a load of 600 Ω
vi) Transmission efficiency
6 M
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