STUPIDSID
1 (a)
Draw the lumped element circuit model for a transmission line. Derive the expression for voltage and current travelling waves.
5 M
1 (b)
Explain simplified Ebers-Moll model for forward active mode of a transistor.
5 M
1 (c)
Explain current flow in p-n junction and give the expression for Idiff in terms of diffusion constant and Vdiff in terms of doping concentration.
5 M
1 (d)
Discuss terminations used for microstrip lines.
5 M
2 (a)
Prove the first three Kuroda s Identities by computing appropriate ABCD matrices.
10 M
2 (b)
Explain construction and functionality of HEMT.
10 M
3 (a)
Discuss power considerations in transmission line when
i) Source and Load impedances are matched
ii) Load impedance is matched and source mismatched.
i) Source and Load impedances are matched
ii) Load impedance is matched and source mismatched.
10 M
3 (b)
Explain with equivalent circuits the RF behavior of resistor,inductor and capacitor.
10 M
4 (a)
Explain Insertion loss, Ripple factor and bandwidth in relation to filter design. Why ideal filter response cannot be realised?
10 M
4 (b)
if Z0=50Ω, plot the following impedances on Smith Chart.
23+j42Ω, 12-j109Ω, 72+j42.5Ω & 115-j22Ω
Find corresponding admittances and VSWR.
23+j42Ω, 12-j109Ω, 72+j42.5Ω & 115-j22Ω
Find corresponding admittances and VSWR.
10 M
5 (a)
Define and derive AC parameters for BJT and FET.
10 M
5 (b)
Explain the role of scattering parameters and its properties at RF and microwaves.
10 M
6 (a)
Explain Schottky contact with help of energy band diagram for metal semiconductor contact.
10 M
6 (b)
Derive expression for internal, external and loaded quality factors for standard series and parallel resonant circuit.
10 M
Write short notes on:
7 (a)
Realization of capacitors and inductors using sections of transmission lines.
7 M
7 (b)
Microstrip transmission lines.
7 M
7 (c)
Butterworth filter.
6 M
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