STUPIDSID
1
A full Wave rectifier using a centre tapped transformer with two diodes gives output voltage of 250 V to a resistive load, the current being 75±25mA. If the ripple factor is 0.001, calculate the specification of the devices and components required if the filter used are-
(i) L section (LC) filter, (ii) ?- Filter and (iii) C filter. Draw complete circuit diagrams each case
(i) L section (LC) filter, (ii) ?- Filter and (iii) C filter. Draw complete circuit diagrams each case
20 M
2 (a)
Design a Single stage RC coupled amplifier using FET BFW-11 biased to provide 3.5mA to achieve voltage gain of 10, lower cut of frequency of 20 Hz and to provide Vo=2.5V.
15 M
2 (b)
For the designed amplifier find Av, Ri, Ro
5 M
3 (a)
Determine the values of big components for CE configuration if VCC =12V,VCE=6V, RC=1K, VBE=0.6 V, hFE=180 for the following circuits -
1. Fixed bias without RE
2. Voltage divider biasing with VRE=1 V
1. Fixed bias without RE
2. Voltage divider biasing with VRE=1 V
10 M
3 (b)
Determine Q Point and draw the dc load line for the following circuit.
10 M
4 (a)
For the following circuit, determine Av, Ri, Ro.
10 M
4 (b)
For a CE amplifier derive the expressions for Av, AI, Zi and Zo.
10 M
5 (a)
For the following circuit determine d.c. output voltage, ripple factor and ripple at the output Assume diodes to be ideal.
10 M
5 (b)
What are the causes of instability of operating point of a BJT amplifier? Derive the expression for stability factor SICO for voltage divider bias circuit.
10 M
6 (a)
For the amplifier shown in following figure, determine-
1. Gm, rd
2. Zi, Zo, Av values in each case for both with and without rd.
10 M
6 (b)
For the following circuit, determine IDQ and verify if the FET will operate in punch-off region.
10 M
7 (a)
Power Mosfet-Characteristics, ratings and application.
7 M
7 (b)
Schottkey diode-characteristics, ratings and application.
7 M
7 (c)
UJT- Characteristics, rating and application.
7 M
7 (d)
IGBT-Characteristics, rating and application.
7 M
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