STUPIDSID
1 (a)
Compare clipper and clamper circuit.
5 M
1 (b)
Explain Barkhausen criteria for sustained oscillations.
5 M
1 (c)
Compare Depletion and Enhancement type MOSFET.
5 M
1 (d)
Transistor is a current controlled device while FET is a voltage controlled device. Justify.
5 M
2 (a)
Define Stability factor. Derive the equation for stability factor. State which biasing technique is more stable. Justify your answer.
10 M
2 (b)
For a NPN transistor in CE mode voltage divider bias configuration determine VC and VB-. Given VCC=+20V, VEE=-20V, R1=8.2 KkΩ, R2=2.2KΩ, RC=2.7 KΩ, RE=1.8 KΩ, C1=C2=10 7mu;F and β=120.
10 M
3 (a)
Derive the equations for Av, Ai, Ri and Ro for a NPN transistor in CE mode voltage divider bias configuration with RE unbypassed.
10 M
3 (b)
For the network given below determine Zi, Zo and Av.
10 M
4 (a)
Explain the basic operation and characteristics of n-channel enhancement type of MOSFET.
10 M
4 (b)
Draw a neat circuit diagram of wien bridge oscillator and derive an expression for its output frequency,
10 M
5 (a)
Determine IDQ, VGSQ VD & VS for the network given below:
10 M
5 (b)
Determine Zi Zo & Av for the circuit given below:
10 M
Write short note on any four:
6 (a)
Biasing of JFET for Zero temperature drift.
5 M
6 (b)
Energy band diagram of MOS capacitor.
5 M
6 (c)
Small signal equivalent circuit of CC amplifier.
5 M
6 (d)
Crystal oscillator.
5 M
6 (e)
DC load line & significance of Q point.
5 M
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