STUPIDSID
Solve any five:-
1 (a)
Draw switching characteristics of a diode and explain reverse recovery time
4 M
1 (b)
Draw energy bond diagram of MOS capacitor in accumulation, depletion and inversion region for P-substrate
4 M
1 (c)
Draw the dc load line for above circuit.
4 M
1 (d)
Compare CE, CB and CC configuration
4 M
1 (e)
Obtain gm, ro and Av for the amplifier circuit shown in figure. In which region the device is operating? Justify.
4 M
1 (f)
State and explain Barkhausen's Criteria for oscillation
4 M
2 (a)
Obtain IDQ, VDSQ, VGSQ graphically
8 M
2 (b)
Derive the expression for frequency of oscillation for a transistorized (BJT) RC phase shift oscillator
8 M
2 (c)
Obtain output for the clipper circuit shown in fig. If a sine wave of 15 sinwt is applied as an input. Assume practicle diode with suitable cut in voltage.
4 M
3 (a)
VTN=1V, Kn=05 mA/V2. ?=0.01 V-1 Determine VGSQ and VDSQ Also calculate voltage gain, input and output resistance.
10 M
3 (b)
Determine Ri, Ro, Av and gm for amplifier circuit shown in figure
VBE(ON)=0.7V, β=100, VA=∞
10 M
4 (a)
Derive the expression for Threshold Voltage for Enhancement type N-channel MOSFET
10 M
4 (b)
Determine IB, ICE, VE and VB and also SICO for the biasing circuit shown in figure
10 M
5 (a)
Explain graphical method to obtain to parameter of CE configuration
10 M
5 (b)
Calculate IDQ, VGSQ and VDSQ
5 M
5 (c)
Determine hybrid-? parameters
5 M
Write short note (any four) :-
6 (a)
Small signal model of a diode
5 M
6 (b)
Hybrid pi model of BJT
5 M
6 (c)
Regions of operation of FET
5 M
6 (d)
Crystal oscilator
5 M
6 (e)
Construction and operation of schottkey diode
5 M
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