GTU Computer Engineering (Semester 3)
Basic Electronics
June 2014
Total marks: --
Total time: --
INSTRUCTIONS
(1) Assume appropriate data and state your reasons
(2) Marks are given to the right of every question
(3) Draw neat diagrams wherever necessary


1 (a) Explain Hall effect phenomenon and list out its applications. Quantitatively discuss the use of Hall effect to determine mobility.
7 M
1 (b) Derive continuity equation for carrier concentration in body of a semiconductor.
7 M

2 (a) Discuss the process of splitting of energy levels of isolated atoms into energy bands as these atoms are brought into close proximity to form a crystal.
7 M
2 (b) 1 Draw diode I-V characteristic, discuss its temperature dependence and obtain expression for diode dynamic resistance.
7 M
2 (c) Explain working of Tunnel diode. Draw its I-V characteristic and symbol. List out applications of Tunnel diode.
7 M

3 (a) For a sinusoidal input of 10 V peak, sketch I R and V O in the circuit shown in Fig. Q. 3 (a). Assume ideal diode with cut-in voltage equal to 0.7 V.

7 M
3 (b) Draw BJT circuit in common-base configuration as well as its input and output characteristics. Explain base-width modulation for the same.
7 M
3 (c) A symmetrical 5 KHz square wave that varies between + 10 V and -10 V is impressed upon the clipping circuit shown in Fig. Q: 3(a) OR. Assume for diode: Rf (forward bias resistance) = 0, Rr (reverse bias resistance) = 2 MΩ, Cut-in voltage = 0. Sketch the steady state output waveform, indicating value of maximum, minimum, and constant portion.

7 M
3 (d) In diode connected transistor circuit shown in Fig. Q: 3 (b) OR, the transistor has β = 19. If VE = 4 V, determine the value of RB . Neglect base-to-emitter junction voltage in the calculations.

7 M

4 (a) Derive expression for AI , A V , Zi , and YO for a basic amplifier circuit in terms of h-parameters.
7 M
4 (b) What do you understand bias compensation? Draw and explain diode compensation circuit for VBE. .
7 M
4 (c) Derive expression for AI , AV , Zi , and Y O for a common-collector amplifier circuit using simplified hybrid model.
7 M
4 (d) Explain thermal runaway. Show graphically that thermal runaway cannot take place if the quiescent point is located at VCE < (1/2) VCC .
7 M

5 (a) Draw two-dimensional structure of n-channel MOSFET. Explain its working.
7 M
5 (b) Explain push-pull arrangement of transistors and discuss its advantages.
7 M
5 (c) Explain the use of FET as a voltage variable resistor.
7 M
5 (d) Draw transformer-coupled audio amplifier circuit. Show that the maximum value of conversion efficiency for this circuit is 50%.
7 M



More question papers from Basic Electronics
SPONSORED ADVERTISEMENTS