STUPIDSID
Explain in brief the following:
1 (a) 1
Diffusion Length.
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1 (a) 2
Conversion Efficiency.
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1 (a) 3
Voltage Stability Factor.
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1 (a) 4
Peak Inverse Voltage.
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1 (a) 5
Critical wavelength.
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1 (a) 6
Pinch off Voltage.
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1 (a) 7
Base Spreading Resistance.
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1 (b)
Explain in detail the energy band diagram of insulator, semiconductor and
Conductor.
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2 (a)
State and explain Pauli's Exclusion Principal.
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2 (b)
Derive continuity equation and explain its importance.
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2 (c)
If a donor impurity is added to the extent of one atom per 108 germanium atoms, calculate its resistivity at 300°k. If its resistivity without addition of
impurity is 44.64 Ω-cm,comparing two values, comment on result. Ge atom per
cm3 is 4.4?10 22 and μn = 3800 cm2 /V-sec.
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3 (a)
Draw switching waveform of diode and explain following terms.
a) Storage time
b) Transition time
c) Reverse recovery time.
a) Storage time
b) Transition time
c) Reverse recovery time.
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3 (b)
A Ge diode has a contact potential of 0.2V, while concentration of acceptor
impurity atoms is 3×1020 per m3 , calculate for a reverse bias of 0.1V the width of
depletion barrier. Assuming cross sectional area of the junction as 1mm2 ,
calculate the transition capacitance value. Assume\[\bigcup_{1}^{0}\] = 16 for Ge.
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3 (c)
(i) Explain peace wise linear diode model.
(ii) FET as Voltage Variable Resistor.
(ii) FET as Voltage Variable Resistor.
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3 (d)
What is the purpose of filter? Explain capacitor filter with waveforms.
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4 (a)
Draw CE transistor configuration and give its input and output characteristics.
Also derive the relation between current gain of CE,CB and CC configurations.
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4 (b)
Explain thermal runaway and derive the condition for thermal stability.
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4 (c)
For circuit of Figure No - 1, calculate the minimum and maximum value of emitter current when ? of transistor varies from 75 to 150. Also calculate the corresponding values of collector to emitter voltage. Take VBE = 0.3V, Rb =10kq, Rc = 50q , Re = 100q, Vcc = +6V.
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4 (d)
Explain compensation techniques related with transistor biasing.
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5 (a)
State and prove Miller's theorem and its dual.
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5 (b)
Describe briefly the construction and working of p channel Enhancement
MOSFET. Draw its characteristic and transfer curve.
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5 (c)
Draw class B push-pull system and derive maximum conversion efficiency
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5 (d)
(i) Compare Load Regulation and Line Regulation.
(ii) Figure -2 shows a basic CE amplifier. If Rs =100q and RL =4kq , determine AVS , AIS ,Ri , and Ro Use hie =1100Y, hre =2.5×10-4 ,hfe =50 and hoe =1/40kY.
(ii) Figure -2 shows a basic CE amplifier. If Rs =100q and RL =4kq , determine AVS , AIS ,Ri , and Ro Use hie =1100Y, hre =2.5×10-4 ,hfe =50 and hoe =1/40kY.
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