STUPIDSID
1 (a)
What are the causes of low frequency noise and high frequency noise associated with the mixer?
5 M
1 (b)
Find S-parameters of two port series network Z=50Ω and ZO=100Ω network.
5 M
1 (c)
What are the characteristics of power amplifiers?
5 M
1 (d)
Explain 1dB Compression point.
5 M
2 (a)
A BJT with IC = 30 mA and VCE = 10V is operated at a frequency of 1 GHz in a 50Ω system. Its S-parameters are -
S11=0.73∠175°
S12=0
S21=4.45∠65°
S22=0.21∠-80°
Determine whether the transistor is unconditionally stable. If yes, calculate optimum terminations, GSmax, GLmax, GTUmax.
S11=0.73∠175°
S12=0
S21=4.45∠65°
S22=0.21∠-80°
Determine whether the transistor is unconditionally stable. If yes, calculate optimum terminations, GSmax, GLmax, GTUmax.
10 M
2 (b)
Explain using suitable diagrams two methods of designing broad band amplifier.
10 M
3 (a)
A BJT has the following s-parameters -
S11=0.65∠-95°
S12=0.035∠40°
S21=5∠115°
S22=0.8∠–35°
Is this transistor unconditionally stable? Draw input and output stability circles.
S11=0.65∠-95°
S12=0.035∠40°
S21=5∠115°
S22=0.8∠–35°
Is this transistor unconditionally stable? Draw input and output stability circles.
10 M
3 (b)
Determine the stability of GaAs FET that has the following S-parameters at 2 GHz in a 50Ω systems both graphically and mathematically -
S11=0.89∠-60°
S12=0.02∠62°
S21=3.1∠123°
S22=0.7∠-27°
S11=0.89∠-60°
S12=0.02∠62°
S21=3.1∠123°
S22=0.7∠-27°
10 M
4 (a)
Derive the Transducer Power gain as
\(G_T = \dfrac {|S_{21}|^2 (1-|\tau_S|^2) (1-|\tau_L|^2)}{|1-\tau_S\tau_{in}|^2 |1 - S_{22}\tau_L|^2}\)
10 M
4 (b)
If a one port microwave diode has Γin=1.5∠60° with respect to Z0=50Ω. Design an oscillator for desired frequency of 10GHz.
10 M
5 (a)
Describe and classify in detail generator tuning networks.
10 M
5 (b)
Explain in detail single ended diode mixer. What are mixer design considerations?
10 M
6 (a)
Compare Microwave Amplifiers with Microwave Oscillators.
10 M
6 (b)
What are the different techniques to obtain power amplifier linearity? Draw and explain feed forward technique.
10 M
7 (a)
Balanced FET mixer.
5 M
7 (b)
Noise figure test equipment.
5 M
7 (c)
Power Distributed Amplifiers.
5 M
7 (d)
Noise parameters at microwave frequencies.
5 M
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