1 (a)
What are the causes of low frequency noise and high frequency noise associated with the mixer?

5 M

1 (b)
Find S-parameters of two port series network Z=50Ω and Z

_{O}=100Ω network.
5 M

1 (c)
What are the characteristics of power amplifiers?

5 M

1 (d)
Explain 1dB Compression point.

5 M

2 (a)
A BJT with I

S

S

S

S

Determine whether the transistor is unconditionally stable. If yes, calculate optimum terminations, G

_{C}= 30 mA and V_{CE}= 10V is operated at a frequency of 1 GHz in a 50Ω system. Its S-parameters are -S

_{11}=0.73∠175°S

_{12}=0S

_{21}=4.45∠65°S

_{22}=0.21∠-80°Determine whether the transistor is unconditionally stable. If yes, calculate optimum terminations, G

_{Smax}, G_{Lmax}, G_{TUmax}.
10 M

2 (b)
Explain using suitable diagrams two methods of designing broad band amplifier.

10 M

3 (a)
A BJT has the following s-parameters -

S

S

S

S

Is this transistor unconditionally stable? Draw input and output stability circles.

S

_{11}=0.65∠-95°S

_{12}=0.035∠40°S

_{21}=5∠115°S

_{22}=0.8∠–35°Is this transistor unconditionally stable? Draw input and output stability circles.

10 M

3 (b)
Determine the stability of GaAs FET that has the following S-parameters at 2 GHz in a 50Ω systems both graphically and mathematically -

S

S

S

S

S

_{11}=0.89∠-60°S

_{12}=0.02∠62°S

_{21}=3.1∠123°S

_{22}=0.7∠-27°
10 M

4 (a)

Derive the Transducer Power gain as

\(G_T = \dfrac {|S_{21}|^2 (1-|\tau_S|^2) (1-|\tau_L|^2)}{|1-\tau_S\tau_{in}|^2 |1 - S_{22}\tau_L|^2}\)

10 M

4 (b)
If a one port microwave diode has Γ

_{in}=1.5∠60° with respect to Z_{0}=50Ω. Design an oscillator for desired frequency of 10GHz.
10 M

5 (a)
Describe and classify in detail generator tuning networks.

10 M

5 (b)
Explain in detail single ended diode mixer. What are mixer design considerations?

10 M

6 (a)
Compare Microwave Amplifiers with Microwave Oscillators.

10 M

6 (b)
What are the different techniques to obtain power amplifier linearity? Draw and explain feed forward technique.

10 M

7 (a)
Balanced FET mixer.

5 M

7 (b)
Noise figure test equipment.

5 M

7 (c)
Power Distributed Amplifiers.

5 M

7 (d)
Noise parameters at microwave frequencies.

5 M

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