MU Electronics Engineering (Semester 6)
Power Electronics-1
May 2013
Total marks: --
Total time: --
INSTRUCTIONS
(1) Assume appropriate data and state your reasons
(2) Marks are given to the right of every question
(3) Draw neat diagrams wherever necessary


1 (a) What are the minimum requirements to turn on the SCR?
4 M
1 (b) Explain two transistor analogy of SCR.
4 M
1 (c) What are the characteristics of ideal power semiconductor devices?
4 M
1 (d) Explain four modes of working of TRIAC.
4 M
1 (e) Compare power BJT, MOSFET and IGBT.
4 M

2 (a) What is the meaning of commutation of SCR? Explain any two methods in detail.
10 M
2 (b) Explain the role of UJT as a relaxation oscillator. Draw the appropriate waveforms.
10 M

3 (a) Explain the single phase full wave fully controlled rectifier for inductive load.
10 M
3 (b) Explain the series connection of SCR. What are the problems associated with this connection?
10 M

4 (a) Explain the three phase controlled rectifier for resistive load. Draw the output waveform for firing angle of 30° and 60°.
10 M
4 (b) What are the protection circuits for SCR? Explain each circuit in brief.
10 M

5 (a) Explain the DIAC-TRIAC circuit for regulating the intensity of light. (Light Dimmer circuit).
10 M
5 (b) If the half-wave controlled rectifier has a purely load of R and the delay angle is &alpha=?/3. Determine:
(i) Rectification Eficiency
(ii)Form Factor
(iii) Ripple Factor.
10 M

6 (a) Derive the performance factors namely; Input displacement factor, Input power factor, DC Voltage, Voltage ratio, Input current distortion factor, Input harmonic factor and Voltage ripple factor for fully- controlled single phase rectifier (Bridge Rectifier) with R-L load.
10 M
6 (b) Explain the construction, working principle, V-I characteristics and applications of DIAC.
10 M

Write short notes on any three:-
7 (a) Power MOSFET.
7 M
7 (b) GTO SCR.
7 M
7 (c) IGBT.
7 M
7 (d) Cooling methods of SCR
7 M



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