MU Electronics and Telecom Engineering (Semester 7)
Microwave & Radar Engineering
December 2013
Total marks: --
Total time: --
INSTRUCTIONS
(1) Assume appropriate data and state your reasons
(2) Marks are given to the right of every question
(3) Draw neat diagrams wherever necessary


1 (a) Explain the relationship between work and energy at microwave frequency.
5 M
1 (b) Justify why waveguide does not support TEM propagation.
5 M
1 (c) How can circulator be implemented using 2 Magic TEE's and phase shifter of 180o
5 M
1 (d) Differentiate between Transit time devices and Transferred Electron devices.
5 M

2 (a) How matched impedance is achieved in transmission line? Explain any one method in detail.
10 M
2 (b) Explain the construction and working of Microwave FET in detail.
10 M

3 (a) Why phase focussing is required in magnetron? What is back heating? How it can be controlled?
10 M
3 (b) Explain the significance of RWH model and two valley model in GUNN diode .
10 M

4 (a) Explain wave propagation in circular waveguide in detail.
10 M
4 (b) What are 'O' type tubes? Explain. A TWT operates under following parameters:
Beam voltage : 2.5 KV
Beam current : 50 mA
Characteristic impedance of helix : 6.75Ω
Circuit Length : 45
Frequency : 8 GHz
Determine gain parameter, power gain and all four propagation constants.
10 M

5 (a) A waveguide has internal length of 3cm and carries the dominant mode of a signal of unknown frequency. If ZTE is 500Ω, what is this frequency?
10 M
5 (b) What are periodic structures? Why are they termed as filters.
10 M

6 (a) Why are detectors used at microwave frequency ? Explain its application in detail.
10 M
6(b) Design a Butterworth low pass filter with microwave components of order 4 with R0=50 Ω operating at a frequency of 3 GHz .
10 M

7 (b) Resonating Re-entrant cavities .
5 M
7 (c) Microstrip transmission lines.
5 M
7 (d) Diode used in Parametric Devices.
5 M
Write short notes on:
7(a) Measurement of VSWR.
5 M



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