STUPIDSID
Solve any of the following:
1 (a)
Explain pre-deposition and drive in steps in diffusion process.
5 M
1 (b)
Classify and discuss in brief the types of Thin Film Deposition methods.
5 M
1 (c)
What is Hall effect? Enlist Important electrical parameters for which measurement is required before device processing begins.
5 M
1 (d)
Explain the need of isolation in VLSI and list the methods to accomplish it?
5 M
1 (e)
Explain SOI fabrication using bonded SOI and smart cut method.
5 M
2 (a)
Explain Czochralski methods for Silicon crystal growth. What are its advantages?
10 M
2 (b)
What do you mean by Class of a clean room? Give the steps in a standards RCA cycle during wafer cleaning.
10 M
3 (a)
Explain Solid source diffusion system with neat diagram. Also give one example of each source for P-type and N-type diffusion.
10 M
3 (b)
Explain High K and low K dielectrics with applications of each.
5 M
3 (c)
What are the basic reactions in formation of SiO2 in dry oxidation and wet oxidation? Explain where these methods are used during MOSFET fabrication process.
5 M
4 (a)
Explain the fabrication process steps along with vertical cross-sectional views for CMOS inverter using N-well process.
10 M
4 (b)
What are the different types of design rules? Draw layout of 2 input NAND gate as per lambda (λ) based design rules (Show units in lambda).
10 M
5 (a)
Enlist important electrical parameters for which measurement is required before device processing begins. Also describe the experimental setup for the Four Probe method for resistivity measurement with the help of a neat diagram.
10 M
5 (b)
Explain the difference between SOI Finfet and bulk Finfet?
3 M
5 (c)
State advantages of Finfet devices over single gate MOSFET devices. Also draw cross-sectional views of different multigate structures.
7 M
Write short notes:
6 (a)
MESFET Fabrication
5 M
6 (b)
Carbon Nanotechnology Transistor
5 M
6 (c)
SOI Technology
5 M
6 (d)
Parametric tests and Functionality tests for IC testing.
5 M
More question papers from IC Technology