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AU First Year Engineering (Semester 2)
Engineering Physics 2
May 2013
Total marks: --
Total time: --
INSTRUCTIONS
(1) Assume appropriate data and state your reasons
(2) Marks are given to the right of every question
(3) Draw neat diagrams wherever necessary

1 Copper has electrical conductivity at 300 K as 6.40?107 mho m-1. Calculate the thermal conductivity of copper.
2 M

2 Define density of states. What is its use?
2 M

3 Compared with Germanium, Silicon is widely used to manufacture the elemental device. Why?
2 M

4 Draw the graph for variation of Fermi level with temperature in p-type semiconductor.
2 M

5 The magnetic field strength of Silicon is 1500 Am-1. If the magnetic susceptibility is -(0.3?10-5). Calculate the magnetisation and flux density is silicon.
2 M

6 What is meant by persistent current?
2 M

7 What are the factors involved in dielectric loss in a dielectric material?
2 M

8 An atom has a polaraisibility of 10-40 Fm2. It finds itself at a distance of 1.0 nm from a proton. Calculate the dipole moment include in the atom. (?0=8.85?10-12).
2 M

9 Sketch the two phases which occur in shape memory alloy.
2 M

10 Mention the properties of carbon nano tubes.
2 M

Answer any one question from Q11 (a) & Q11 (b)
11 (a) Define electrical conductivity. Obtain an expression for electrical conductivity by free electron theory.
16 M
11 (b) Based on Fermi-Dirac statistics, state the nature of Fermi distribution function. How it vary with temperature?
16 M

Answer any one question from Q12 (a) & Q12 (b)
12 (a) Explain the terms conduction band and valence band of an intrinsic semiconductor with a diagram. Derive an expression for density of electrons in conduction band.
16 M
12 (b) What is Hall effects? Derive an expression for Hall coefficient. Describe an experiment for the measurement of the Hall coefficient and mention its application.
16 M

Answer any one question from Q13 (a) & Q13 (b)
13 (a) Explain domain theory of ferromagnetism.
16 M
13 (b) Mention the difference between soft and hard superconductors. Decribe principle and working of SQUID and Crytron.
16 M

Answer any one question from Q14 (a) & Q14 (b)
14 (a) Define Electric and Ionic polarisation and explain them with a neat diagram.
16 M
14 (b) Define dielectric breakdown. Explain five types of dielectric breakdown occur in dielectric materials.
16 M

Answer any one question from Q15 (a) & Q15 (b)
15 (a) Explain the characteristics of Shape Memory Alloy and mention its advantages and disadvantages.
16 M
15 (b) (i) Describe plasma arcing techniques with a diagram to fabricate nano particles.
8 M
15 (b) (ii) Explain how are carbon nano particles fabricated using Laser deposition method.
8 M

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