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SPPU Electronics and Telecom Engineering (Semester 3)
Electronic Devices & Circuits
December 2016
Total marks: --
Total time: --
INSTRUCTIONS
(1) Assume appropriate data and state your reasons
(2) Marks are given to the right of every question
(3) Draw neat diagrams wherever necessary

Solve any one question fromQ.1(a,b) and Q.2(a,b)
1(a) Draw and explain the construction and working of N-channel JFET.
6 M
1(b) Explain the following non-ideal V-I characteristics of MOSFET:
i) Finite output resistance
ii) Subthreshold conduction
iii) Breakdown effects.
6 M

2(a) Determine the operating point (IDQ, VDSQ) of the JFET circuit as shown if figure (1). Calculate RS
!mage
6 M
2(b) Draw the constructional diagram of Nchannel E-MOSFET and give drain and transfer characteristics for the same with necessary parameters.
6 M

Solve any one question fromQ3(a,b) and Q.4(a,b)
3(a) For the circuit digram shown in Fig.2, determine the gm,Av, Ri, Ro.
!mage.
8 M
3(b) Write short note on constant current source using MOSFET.
4 M

4(a) Explain the BiCMOS technology with suitable diagram.
6 M
4(b) Explain how MOSFET can be used as Active resistor in VLSI circuits.
6 M

Solve any one question fromQ5(a,b) and Q.6(a,b)
5(a) Draw the different types of feedback topologies and compare their input and output impedances.
8 M
5(b) Give the Barkhausen criterion and draw any LC oscillator circuit.
5 M

6(a) For the circuit digram shown in Fig.3, determine the Gmf, Avf, Rif, Rof. Assume: gm= 1.6 mA/V
rd= 25 kΩ
!mage.
8 M
6(b) Differentiate RC and LC oscillator and draw RC phase shift oscillator using FET.
5 M

Solve any one question fromQ.7(a,b) and Q.8(a,b)
7(a) Draw and explain block diagram of adjustable positive three terminal voltage regulator.
8 M
7(b) Compare linear regulator and SMPS.
5 M

8(a) Explain SMPS using suitable block diagram.
7 M
Solve any one question fromQ.1(a,b,c) and Q.2(a,b,c)
8(b) Design an adjustable voltage using LM317 for output voltage 5-15 volts and draw necessary connection diagram (Assume R1 = 240Ω and I adjustable = 100 μA).
6 M

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