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MU First Year Engineering (Semester 1)
Applied Physics 1
December 2013
Total marks: --
Total time: --
INSTRUCTIONS
(1) Assume appropriate data and state your reasons
(2) Marks are given to the right of every question
(3) Draw neat diagrams wherever necessary

Slove any five from the following
1 (a) Define the term space lattice, unit cell and lattice parameter.
3 M
1 (b) Find the interplaner spacing between the family of planes (111) in a crystal of lattice constant 3A?.
3 M
1 (c) Represent the following in the cubic unit cell :-
(IT2), (002), 
3 M
1 (d) Define drift current, diffusion current and mobility of charge carriers.
3 M
1 (e) Explain the use of P-N junction as a solar cell.
3 M
1 (f) State with neat diagram direct and inverse Piezoelectric effect.
3 M
1 (g) What is magnetic circuit? Explain Ohm's Law on case of magnetic circuit.
3 M

2 (a) Explain the hall effect in metal ? Derive the formulae to determine the density and mobility of the electrons.
8 M
2 (b) Define ligancy and critical radius ratio in case of ionic solid. Write the conditions for stability of ionic crystal in 3-D ? Determine critical radius ratio for ligancy 6.
7 M

3 (a) Explain with neat diagram construction of Bragg's X-ray spectrometer ? Write the procedure to determine crystal structure. Calculate the maximum order of diffraction if X-ray of wave length 0.819 A? is incident on a crystal of lattice spacing 0.282 nm.
8 M
3 (b) Calculate the number of turns required to produce a magnetic flux of 4 x 105 wb, if iron rod of length 50cm and cross sectional area 4 cm2 carrying an electric current 1A is in the form of ring.(Permeability of iron is 65 x 10-4 H/m).
7 M

4 (a) What is mesomorphic state of matter ? Explain with neat diagram cholesteric phase.
5 M
4 (b) What is dielectric polarization and dielectric susceptibility? Find the relation between them?
5 M
4 (c) The resistivity of intrinsic InSb at room temperature is 2 x 10-4? cm. if the mobility of electron is 6m2/V-Sec and mobility of hole is 0-2 m2/V-Sec. calculate its instrinsic carrier density.
5 M

5 (a) Identify the crystal structure if its density is 9.6 x 102 kg/m3, lattice constant is 4.3 A? and atomic weight is 23.
5 M
5 (b) Explain the formation of depletion region in P-N junction.
5 M
5 (c) Define reverberation time ? State Sabine's formula and explain the terms involved in it?
5 M

6 (a) What are soft and Hard magnetic materials ? State their properties and applications.
5 M
6 (b) What is Fermi level in semiconductor? Show that in intrinsic semiconductor Fermi level always at the middle between the forbidden energy gap?
5 M
6 (c) An Ultrasonic sound wave is used to detect the position of defect in a steel bar of thickness 50 cm. if the echo times are 40 and 90 ?-sec. Locate the position of defect.
5 M

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