1 (a)
State and explain the various resistance levels of the semiconductor diode.

6 M

1 (b)
Explain the working of a full wave centre tapped rectifier. Also determine ripple factor, efficiency and voltage regulation.

10 M

1 (c)
Design a suitable circuit represented by the box shown below, which has the input and output waveforms as indicated.

4 M

2 (a)
Name different biasing methods of transistor. With circuit diagram analyse the fixed bias circuit, with effect of variation in I

_{B}, R_{C}and V_{CC}on Q, point of the load line.
10 M

2 (b)
Explain the circuit of transistor switch being used as an inverter.

4 M

2 (c)
In a voltage divider bias circuit of BJT. V

_{CC}=20 V, R_{C}=10 KΩ, RE=1.5 kΩ, R_{1}=40 kΩ, R_{2}=4 kΩ. Assume silicon transistor β=150. Find I_{C}, V_{CE}and I_{C(sat)}using exact analysis.
6 M

3 (a)
Define h-parameters and hence derive h-parameters model of CE-BIT.

6 M

3 (b)
Explain with a neat circuit diagram of emitter configuration. Justify how voltage gain is nearly equal to one.

6 M

3 (c)
For the circuit shown below determine V

_{CC}, if A_{V}=160 and r_{0}=100 kΩ. Take β=100.

8 M

4 (a)
Draw the single stage RC coupled BJT amplifier and discuss the effect of (low frequency response): i) Input capacitance C

_{b}ii) output capacitance C_{C}and iii) Emitter by pass capacitance C_{e}on frequency response.
5 M

4 (b)
Prove that miller effect of input capacitance C

_{Mi}=(1-A_{v}) Cf and output capacitance \[ C_{M0} = \left ( 1- \dfrac {1} {A_v} \right ) C_f. \]
10 M

4 (c)
It is desired that the voltage gain of an RC - coupled amplifier at 60Hz should not decrease by more than 10% from its mid bond value. Calculate:

i) the lower 3 dB frequency

ii) the required C if R=2000 Ω.

i) the lower 3 dB frequency

ii) the required C if R=2000 Ω.

5 M

5 (a)
Derive expression for Z

_{i}and A_{i}for a Darlington emitter follower circuit.
10 M

5 (b)
Mention the types of feedback connections. Draw their block diagrams indicating input and output signal.

6 M

5 (c)
List the general characteristics of a negative feedback amplifier and write its advantages.

4 M

6 (a)
With a neat circuit diagram, explain the operation of a transformer coupled class A power amplifier.

7 M

6 (b)
Explain the operation of class B push-pull amplifier and derive its conversion efficiency.

8 M

6 (c)
The following distortion reading are available for a power amplifier:

D

i) the THD

ii) the fundamental power component

iii) the total power.

D

_{2}=0.2, D_{3}=0.02, D_{4}=0.06 with R_{1}=3.3A and R_{C}=4Ω Calculate:i) the THD

ii) the fundamental power component

iii) the total power.

5 M

7 (a)
Explain the working of Wien bridge oscillator.

7 M

7 (b)
With a neat circuit diagram, explain the operation of BJT Colpitt's oscillator.

6 M

7 (c)
A crystal has the following parameter L=0.334 H, C

_{M}=1 pF, C=0.065 and R=5.5 kΩ. Calculate the series resonant frequency, parallel resonant frequency and find Q of the crystal.
7 M

8 (a)
Draw the JFET common drain configuration (source - follower) circuit. Derive Z

_{i}, Z_{0}and A_{v}using small signal model. Write its characteristics.
10 M

8 (b)
Compare JFET and MOSFET.

3 M

8 (c)
For the JFET common drain configuration shown below. Given I

_{DSS}=10 mA, V_{p}=-5V, r_{d}=40 kΩ, V_{GSQ}=-2.85V i) calculate Z_{i}and Z_{o}ii) Calculate A_{v}iii) find V_{0}if V_{i}=20 mV (p-p).

7 M

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